Manufacturer Part Number
FDN339AN
Manufacturer
onsemi
Introduction
N-Channel MOSFET transistor
Product Features and Performance
20V Drain-Source Voltage (Vdss)
±8V Gate-Source Voltage (Vgs)
35mOhm On-Resistance (Rds(on)) at 3A, 4.5V
3A Continuous Drain Current (Id) at 25°C
700pF Input Capacitance (Ciss) at 10V
500mW Power Dissipation at 25°C
10nC Gate Charge (Qg) at 4.5V
Product Advantages
Compact SOT-23-3 surface mount package
Low on-resistance for efficient power switching
Wide operating temperature range (-55°C to 150°C)
Suitable for high-frequency, high-speed switching applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
5V Gate Threshold Voltage (Vgs(th)) at 250μA
5V/4.5V Drive Voltage (Min/Max Rds(on))
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Compatible with common MOSFET driver circuits
Application Areas
Power supplies
DC-DC converters
Motor drives
Switching regulators
General-purpose switching applications
Product Lifecycle
Current product
Replacement/upgrade options available from onsemi
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Low on-resistance for efficient power switching
Wide operating temperature range
Suitable for high-frequency, high-speed applications
RoHS3 compliance for environmental responsibility
FDN338P-NLGC Electronics