Manufacturer Part Number
FDMS8660S
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET with low on-resistance and optimized switching characteristics
Product Features and Performance
Low on-resistance of 2.4 mΩ at 25 A, 10 V
High current capability of 25 A continuous (Ta) and 40 A continuous (Tc)
Low input capacitance of 4345 pF at 15 V
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 113 nC at 10 V
Rugged design with PowerTrench® technology
Product Advantages
Excellent power efficiency and thermal performance
Optimized for high-frequency, high-current switching applications
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2 V at 250 A
On-Resistance (Rds(on)): 2.4 mΩ at 25 A, 10 V
Quality and Safety Features
Compliant with RoHS and REACH requirements
Halogen-free and lead-free package
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Automotive electronics
Industrial power supplies
Server and telecommunications equipment
Switching power supplies
Motor drives
Product Lifecycle
Currently in production
Replacement or upgrade options available upon request
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Optimized for high-frequency, high-current switching applications
Reliable and robust design for demanding applications
Wide operating temperature range and compatibility