Manufacturer Part Number
FDMS7600AS
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
2 N-Channel (Dual) Configuration
30V Drain to Source Voltage (Vdss)
5mOhm Rds On (Max) @ 12A, 10V
MOSFET (Metal Oxide) Technology
12A Continuous Drain (Id) @ 25°C, 22A
1750pF Input Capacitance (Ciss) (Max) @ 15V
3V Vgs(th) (Max) @ 250A
28nC Gate Charge (Qg) (Max) @ 10V
-55°C to 150°C (TJ) Operating Temperature
1W Power Max
Product Advantages
Compact 8-PowerWDFN package
Logic Level Gate FET Feature
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Current Continuous Drain (Id) @ 25°C: 12A, 22A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Suitable for high-power applications
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
Compact 8-PowerWDFN package
Logic Level Gate FET Feature
Suitable for high-power applications
Excellent technical parameters, including low Rds On, high current capability, and low input capacitance
RoHS3 compliant for environmental friendliness
