Manufacturer Part Number
FDMS6673BZ
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Transistor, FET, MOSFET (Single)
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
P-Channel
30V Drain-Source Voltage
2A Continuous Drain Current at 25°C
28A Continuous Drain Current at Case Temperature
8mOhm On-Resistance
5915pF Input Capacitance
130nC Gate Charge
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
High current handling capability
Low on-resistance for improved efficiency
Surface mount package for compact design
Suitable for high-frequency and high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 6.8mOhm
Continuous Drain Current (Id): 15.2A (Ta), 28A (Tc)
Input Capacitance (Ciss): 5915pF
Power Dissipation: 2.5W (Ta), 73W (Tc)
Quality and Safety Features
RoHS3 compliant
8-PQFN (5x6) package
Compatibility
Can be used in a variety of power management, switching, and control applications.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
High current handling capability for efficient power handling
Low on-resistance for improved efficiency and reduced power losses
Wide operating temperature range for versatile applications
Surface mount package for compact design integration
RoHS3 compliance for environmental responsibility
