FDMC8854 - onsemi

Manufacturer Part Number

FDMC8854

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET transistor designed for a wide range of power management and power switching applications

Product Features and Performance

High drain-to-source breakdown voltage of 30V

Low on-resistance of 5.7mΩ at 15A and 10V gate-to-source voltage

High continuous drain current of 15A at 25°C case temperature

Wide operating temperature range of -55°C to +150°C

Low input capacitance of 3405pF at 10V drain-to-source voltage

Low gate charge of 57nC at 10V gate-to-source voltage

Product Advantages

Excellent thermal management and power handling capability

Efficient power switching and reduced power losses

Suitable for high-current, high-voltage power applications

Robust design for reliable operation in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 5.7mΩ @ 15A, 10V

Continuous Drain Current (Id): 15A @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free soldering processes

Compatibility

Compatible with a wide range of power management and power switching applications

Application Areas

Power supplies

Motor drives

Industrial controls

Automotive electronics

Telecommunications equipment

Product Lifecycle

This product is an active, in-production device from onsemi.

Replacement or upgrade options may be available from onsemi or other manufacturers.

Several Key Reasons to Choose This Product

Excellent power handling and thermal management capabilities

Low on-resistance and high efficiency for reduced power losses

Wide operating temperature range for use in harsh environments

Robust design and RoHS3 compliance for reliable operation

Suitable for a wide range of power management and power switching applications