Manufacturer Part Number
FDMC8010DC
Manufacturer
onsemi
Introduction
High-Performance N-Channel MOSFET Transistor
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 30V
Maximum Continuous Drain Current (Id) of 37A at 25°C
On-Resistance (Rds(on)) of 1.28mΩ at 37A, 10V
Input Capacitance (Ciss) of 7080pF at 15V
Gate Charge (Qg) of 94nC at 15V
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent on-state resistance and low power loss
High current capability
Compact 8-PQFN (3.3x3.3) package
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
±20V Maximum Gate-to-Source Voltage (Vgs)
3W Maximum Power Dissipation at 25°C
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Power management
Motor control
Automotive electronics
Industrial automation
Product Lifecycle
The FDMC8010DC is an active and available product.
Several Key Reasons to Choose This Product
High current handling capability
Low on-resistance for efficient power conversion
Compact package for space-constrained designs
Wide operating temperature range for rugged applications
