FDMC6688P - onsemi

Manufacturer Part Number

FDMC6688P

Manufacturer

onsemi

Introduction

High-performance P-channel MOSFET transistor suitable for high-power, high-frequency switching applications.

Product Features and Performance

Fully-enhanced P-channel MOSFET

Low on-resistance (RDS(on)) of 6.5 mΩ max @ 14 A, 4.5 V

High drain current capability of 14 A (Ta) and 56 A (Tc)

Low input capacitance (Ciss) of 7435 pF max @ 10 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Reliable high-current switching performance

Compact 8-PQFN (3.3x3.3) package with high thermal dissipation

Key Technical Parameters

Drain-to-Source Voltage (VDS): 20 V

Gate-to-Source Voltage (VGS): ±8 V

Power Dissipation (Pd): 2.3 W (Ta), 30 W (Tc)

Input Capacitance (Ciss): 7435 pF max @ 10 V

Gate Charge (Qg): 61 nC max @ 4.5 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability, high-temperature applications

Compatibility

Compatible with a wide range of high-power, high-frequency switching circuits and applications

Application Areas

High-power DC-DC converters

Motor drives

Power inverters

Industrial and automotive electronics

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

High current handling capability

Compact and thermally efficient package

Proven reliability and suitability for high-temperature applications

Compatibility with a wide range of high-power switching circuits and applications