FDMA910PZ - onsemi

Manufacturer Part Number

FDMA910PZ

Manufacturer

onsemi

Introduction

High-performance P-channel MOSFET transistor for power management and control applications

Product Features and Performance

P-channel MOSFET with PowerTrench technology

Low on-resistance of 20 mΩ @ 9.4 A, 4.5 V

High continuous drain current of 9.4 A at 25°C

Low gate charge of 29 nC @ 4.5 V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 2805 pF @ 10 V

Product Advantages

Excellent power efficiency

High power density

Robust and reliable performance

Suitable for a wide range of applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate-Source Voltage (Vgs Max): ±8 V

Power Dissipation (Max): 2.4 W

Vgs(th) (Max) @ Id: 1.5 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4.5 V

Quality and Safety Features

RoHS3 compliant

6-MicroFET (2x2) package for surface mount

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power management

Motor control

Switching power supplies

Lighting control

Industrial automation

Product Lifecycle

Current product, no discontinuation plans

Replacements and upgrades available as technology advances

Several Key Reasons to Choose This Product

Excellent power efficiency and high power density

Robust and reliable performance across a wide temperature range

Suitable for a variety of power management and control applications

RoHS3 compliant for environmentally-conscious design

Availability of replacements and upgrades as technology evolves