Manufacturer Part Number
FDMA3028N
Manufacturer
onsemi
Introduction
This is a dual N-channel MOSFET transistor from onsemi's PowerTrench series, designed for a variety of power and switching applications.
Product Features and Performance
30V drain-source voltage rating
68mΩ maximum on-resistance at 3.8A and 4.5V gate-source voltage
8A continuous drain current at 25°C
375pF maximum input capacitance at 15V drain-source voltage
2nC maximum gate charge at 5V gate-source voltage
Logic level gate with 1.5V maximum threshold voltage at 250μA drain current
-55°C to 150°C operating temperature range
700mW maximum power dissipation
Product Advantages
Low on-resistance for efficient power switching
Logic level gate for easy microcontroller compatibility
Small 6-VDFN Exposed Pad package for space-constrained designs
RoHS3 compliant for environmentally-friendly applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 68mΩ
Continuous Drain Current (Id): 3.8A
Input Capacitance (Ciss): 375pF
Gate Charge (Qg): 5.2nC
Threshold Voltage (Vgs(th)): 1.5V
Quality and Safety Features
RoHS3 compliant for restricted hazardous substances
6-MicroFET (2x2) package for small footprint and high reliability
Compatibility
This MOSFET is compatible with a wide range of power and control applications, including:
Motor drives
Power supplies
Switching regulators
Battery management systems
Application Areas
General-purpose power switching
Low-voltage, high-current applications
Portable electronics and battery-powered devices
Product Lifecycle
This product is currently in production and not nearing discontinuation. Replacement or upgrade options may be available from onsemi in the future.
Key Reasons to Choose This Product
Efficient power switching with low on-resistance
Logic level gate for easy microcontroller integration
Small package size for space-constrained designs
Wide operating temperature range for demanding applications
RoHS3 compliance for environmentally-friendly use