FDMA1032CZ - onsemi

Manufacturer Part Number

FDMA1032CZ

Manufacturer

onsemi

Introduction

Discrete semiconductor product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

6-MicroFET (2x2) package

PowerTrench series

N and P-Channel configuration

MOSFET (Metal Oxide) technology

Logic Level Gate FET feature

20V Drain to Source Voltage (Vdss)

68mOhm max Rds On @ 3.7A, 4.5V

7A continuous Drain Current (Id) @ 25°C

340pF max Input Capacitance (Ciss) @ 10V

6nC max Gate Charge (Qg) @ 4.5V

-55°C to 150°C operating temperature range

700mW max Power

Product Advantages

Compact 6-VDFN Exposed Pad package

Suitable for high-density, low-profile designs

Efficient power handling and thermal management

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V

Current Continuous Drain (Id) @ 25°C: 3.7A, 3.1A

Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for high-density, low-profile designs

Power management applications

Product Lifecycle

Currently available product

No information on discontinuation or replacements

Key Reasons to Choose This Product

Compact 6-VDFN Exposed Pad package for high-density designs

Efficient power handling and thermal management capabilities

Wide operating temperature range of -55°C to 150°C

RoHS3 compliance for environmental safety