Manufacturer Part Number
FDFS2P753Z
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
30V Drain-Source Voltage
±25V Gate-Source Voltage
115mΩ Maximum On-Resistance @ 3A, 10V
3A Maximum Continuous Drain Current @ 25°C
455pF Maximum Input Capacitance @ 10V
Schottky Diode (Isolated)
6W Maximum Power Dissipation @ 25°C
P-Channel MOSFET
3V Maximum Gate Threshold Voltage @ 250μA
3nC Maximum Gate Charge @ 10V
Product Advantages
High power density
Low on-resistance
Isolated Schottky diode
Key Technical Parameters
Drain-Source Voltage: 30V
Gate-Source Voltage: ±25V
On-Resistance: 115mΩ @ 3A, 10V
Continuous Drain Current: 3A @ 25°C
Input Capacitance: 455pF @ 10V
Power Dissipation: 1.6W @ 25°C
Gate Threshold Voltage: 3V @ 250μA
Gate Charge: 9.3nC @ 10V
Quality and Safety Features
Operating Temperature Range: -55°C to 150°C
Compatibility
Surface Mount
8-SOIC (0.154", 3.90mm Width) package
Application Areas
Power management
Motor control
Switching circuits
Product Lifecycle
Current production
Replacements and upgrades may be available
Key Reasons to Choose
High power density
Low on-resistance
Isolated Schottky diode
Wide operating temperature range
Suitable for power management, motor control, and switching applications
