FDD850N10L - onsemi

Manufacturer Part Number

FDD850N10L

Manufacturer

onsemi

Introduction

Power MOSFET transistor designed for high-performance power switching applications

Product Features and Performance

High power density and efficiency

Low on-resistance for low conduction losses

High-speed switching for improved efficiency

Wide operating temperature range of -55°C to 175°C

Optimized for applications requiring high current, high voltage, and fast switching

Product Advantages

Excellent thermal performance due to PowerTrench technology

Robust and reliable design for demanding applications

Compact surface-mount package for high-density PCB designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 75mΩ @ 12A, 10V

Continuous Drain Current (Id): 15.7A @ 25°C

Input Capacitance (Ciss): 1465pF @ 25V

Power Dissipation (Tc): 50W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Surface-mount TO-252AA (DPak) package

Application Areas

Switching power supplies

Motor drives

Inverters

Appliances

Industrial equipment

Product Lifecycle

The FDD850N10L is an active product and not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose

Excellent power efficiency and thermal performance

Reliable and robust design for demanding applications

Compact surface-mount package for high-density PCB designs

Wide operating temperature range for versatile use

RoHS3 compliance for environmental responsibility