Manufacturer Part Number
FDD3510H
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
N and P-Channel, Common Drain
Drain to Source Voltage (Vdss): 80V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V
Current Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Product Advantages
MOSFET (Metal Oxide) technology
Surface Mount Mounting Type
Wide Operating Temperature Range: -55°C ~ 150°C (TJ)
Low On-Resistance
Key Technical Parameters
Power Max: 1.3W
RoHS: ROHS3 Compliant
Manufacturer's packaging: TO-252 (DPAK)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252 (DPAK)
Series: PowerTrench
Package: Tape & Reel (TR)
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with a wide range of electronic devices and applications
Application Areas
Suitable for use in a variety of electronic circuits and devices
Product Lifecycle
This product is actively available and not nearing discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current handling capability
Wide operating temperature range suitable for demanding applications
Surface mount package for easy integration into compact designs
ROHS3 compliance for use in environmentally-conscious applications
Part of the reliable PowerTrench series from onsemi
FDD2670-NLVBSEMI