Manufacturer Part Number
FDD10AN06A0
Manufacturer
onsemi
Introduction
The FDD10AN06A0 is a discrete N-channel MOSFET transistor manufactured by onsemi.
Product Features and Performance
60V drain-to-source voltage
5 mOhm maximum on-resistance at 50A, 10V
11A continuous drain current at 25°C (Ta), 50A at 25°C (Tc)
1840 pF maximum input capacitance at 25V
135W maximum power dissipation at 25°C (Tc)
-55°C to 175°C operating temperature range
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage: 60V
Gate-to-source voltage: ±20V
On-resistance: 10.5 mOhm
Drain current: 11A (Ta), 50A (Tc)
Input capacitance: 1840 pF
Power dissipation: 135W
Quality and Safety Features
RoHS3 compliant
TO-252AA package
Compatibility
Can be used in a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
This product is currently in production and available for purchase.
Key Reasons to Choose This Product
Low on-resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Compact TO-252AA package
RoHS3 compliance for environmental safety
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