Manufacturer Part Number
FDC6321C
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N and P-Channel MOSFET Array
Product Features and Performance
Low On-Resistance (RDS(on))
Logic Level Gate
Fast Switching Speed
High Current Capability
Product Advantages
Efficient Power Handling
Reliable Operation
Space-Saving Package
Key Technical Parameters
Drain to Source Voltage (VDS): 25V
On-Resistance (RDS(on)): 450mΩ @ 500mA, 4.5V
Continuous Drain Current (ID): 680mA (N-Channel), 460mA (P-Channel)
Input Capacitance (Ciss): 50pF @ 10V
Threshold Voltage (Vgs(th)): 1.5V @ 250µA
Gate Charge (Qg): 2.3nC @ 5V
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range: -55°C to 150°C
Compatibility
Surface Mount Package: SOT-23-6 Thin, TSOT-23-6
Application Areas
Power Management
Switching Circuits
Motor Control
Battery-Powered Devices
Product Lifecycle
Current product, no discontinuation information available
Replacements or upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Efficient power handling and reliable operation
Small, space-saving package
Logic level gate for easy integration
Wide operating temperature range
Suitable for a variety of power management and switching applications
FDC6322LAPIS Technology