Manufacturer Part Number
FDC3601N
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET transistor
Part of the PowerTrench series
Product Features and Performance
Operating temperature range: -55°C to 150°C
Maximum power dissipation: 700mW
Drain-to-source voltage (Vdss): 100V
On-state resistance (RDS(on)): 500mΩ @ 1A, 10V
Continuous drain current (ID): 1A @ 25°C
Input capacitance (Ciss): 153pF @ 50V
Threshold voltage (Vgs(th)): 4V @ 250μA
Gate charge (Qg): 5nC @ 10V
Product Advantages
Compact SuperSOT-6 package
High power density
Low on-state resistance
Suitable for space-constrained applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Configuration: Dual N-Channel
Packaging: Tape & Reel (TR), SOT-23-6 Thin, TSOT-23-6
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature environments
Compatibility
Suitable for a wide range of applications, such as:
- Power management circuits
- Switching circuits
- Driver circuits
Application Areas
Power supplies
Motor drives
Battery charging circuits
Amplifier circuits
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options may be available, but not explicitly stated
Key Reasons to Choose This Product
Compact and space-saving package
High power density and low on-state resistance
Suitable for high-temperature environments
Versatile applications in power management and control circuits