Manufacturer Part Number
FDB8453LZ
Manufacturer
onsemi
Introduction
The FDB8453LZ is a high-performance N-channel power MOSFET transistor in a DPAK (TO-263) package, designed for use in a variety of power management and control applications.
Product Features and Performance
N-channel MOSFET transistor
DPAK (TO-263) surface mount package
Drain-Source Voltage (VDS) up to 40V
Continuous Drain Current (ID) up to 16.1A (at 25°C) and 50A (at case temperature)
Low On-Resistance (RDS(on)) of 7mΩ (at 17.6A, 10V)
High input capacitance (Ciss) of 3545pF (at 20V)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power management and control
High current handling capability
Low conduction losses
Compact and space-saving DPAK package
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (VDS): 40V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 7mΩ (at 17.6A, 10V)
Input Capacitance (Ciss): 3545pF (at 20V)
Power Dissipation (PD): 3.1W (at 25°C), 66W (at case temperature)
Quality and Safety Features
Robust and reliable design
Thermal protection against overheating
ESD protection for improved reliability
Compatibility
Suitable for a wide range of power management and control applications
Commonly used in switch-mode power supplies, motor drives, and other power electronics
Application Areas
Power management and control
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power management
Compact DPAK package for space-saving designs
Wide operating temperature range for versatile applications
Robust design and thermal protection for reliable performance
Suitable for a variety of power electronics and control applications
