Manufacturer Part Number
FDB38N30U
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET
Suitable for use in high-power switching applications
Product Features and Performance
Extremely low on-state resistance (RDS(on))
High current handling capability (38A continuous drain current)
High breakdown voltage (300V drain-to-source voltage)
Low gate charge for fast switching
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
High reliability
Compact DPAK (TO-263) package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 300V
Gate-to-Source Voltage (VGS): ±30V
On-State Resistance (RDS(on)): 120mΩ @ 19A, 10V
Continuous Drain Current (ID): 38A @ 25°C
Input Capacitance (Ciss): 3340pF @ 25V
Power Dissipation (PD): 313W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-power, high-reliability applications
Compatibility
Widely used in power switching circuits, motor drives, and other high-power electronic systems
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacement or upgrade options available from onsemi
Several Key Reasons to Choose This Product
Excellent power efficiency and performance
High reliability and ruggedness
Compact and easy to integrate DPAK package
Suitable for a wide range of high-power applications
Proven track record and strong technical support from onsemi
