FCMT199N60 - onsemi

Manufacturer Part Number

FCMT199N60

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

Surface Mount Mounting

SuperFET II Series

N-Channel MOSFET

Drain to Source Voltage (Vdss): 600 V

Gate-Source Voltage (Vgs) (Max): ±20 V

Drain-Source On-Resistance (Rds On) (Max) @ 10A, 10V: 199 mOhm

Continuous Drain Current (Id) @ 25°C: 20.2 A

Input Capacitance (Ciss) (Max) @ 100 V: 2950 pF

Power Dissipation (Max) @ Tc: 208 W

Threshold Voltage (Vgs(th)) (Max) @ 250 A: 3.5 V

Gate Charge (Qg) (Max) @ 10 V: 74 nC

Operating Temperature: -55°C to 150°C

Product Advantages

High voltage capability

Low on-resistance

High current rating

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 600 V

Gate-Source Voltage (Vgs) (Max): ±20 V

Drain-Source On-Resistance (Rds On) (Max): 199 mOhm

Continuous Drain Current (Id): 20.2 A

Power Dissipation (Max): 208 W

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting

Application Areas

Industrial

Power Supplies

Motor Drives

Inverters

Product Lifecycle

Current product, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

High voltage and current capability

Low on-resistance for efficiency

Compact surface mount package

Proven reliability and performance in industrial applications