Manufacturer Part Number
FCH76N60NF
Manufacturer
onsemi
Introduction
High-performance, high-power N-channel MOSFET transistor
Product Features and Performance
Excellent RDS(on) performance
High drain-source voltage rating of 600V
Supports high current up to 72.8A at 25°C
Low gate charge of 300nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power switching with low conduction losses
Robust design for high voltage and high current applications
Suitable for use in a variety of power conversion and control circuits
Key Technical Parameters
Drain-Source Voltage (VDSS): 600V
Gate-Source Voltage (VGSS): ±30V
On-State Resistance (RDS(on)): 38mΩ @ 38A, 10V
Continuous Drain Current (ID): 72.8A at 25°C
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal performance
Compatibility
Designed for use in various power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely available device from onsemi.
Key Reasons to Choose This Product
Excellent performance in terms of low RDS(on) and high current handling
Robust design for high voltage and high current applications
Suitable for a wide range of power electronics applications
Reliable and thermally efficient TO-247-3 package