Manufacturer Part Number
FAN7392N
Manufacturer
onsemi
Introduction
High-power gate driver for IGBTs and N-Channel MOSFETs
Product Features and Performance
Independent half-bridge gate driver
Dual-channel gate driver support
Support for IGBT and N-Channel MOSFET gate types
High side voltage tolerance up to 600V for bootstrap
Fast rise and fall times for improved switching efficiency (25ns/20ns typ.)
Product Advantages
Capable of driving high voltage and power devices
Enhanced thermal performance for high-temperature operations
Robust peak output current capability of 3A (source and sink)
Key Technical Parameters
Supply Voltage range: 10V to 20V
Logic Voltage thresholds: VIL 4.5V, VIH 9.5V
High Side Voltage (Bootstrap): Max 600V
Output Current (Source/Sink): 3A/3A
Rise/Fall Time: 25ns/20ns typical
Operating Temperature range: -40°C to 150°C (TJ)
Quality and Safety Features
Built to withstand high temperatures up to 150°C (TJ)
Durable construction for through-hole mounting
Compatibility
Compatible with various high-power IGBTs and N-Channel MOSFETs
Application Areas
High-frequency switch mode power supplies
Motor controllers
High-power inverters and converters
Product Lifecycle
Obsolete status - consulting manufacturer for potential replacements or upgrades is advised
Several Key Reasons to Choose This Product
High-voltage operation support enhances versatility in power applications
Dual independent drivers allow for precise control in half-bridge configurations
Efficient switching characteristics reduce power loss and heat
Robust design enables operation in extreme temperature conditions
Industry-standard DIP package facilitates ease of use in prototyping and manufacturing.