EMH2314-TL-H - onsemi

Manufacturer Part Number

EMH2314-TL-H

Manufacturer

onsemi

Introduction

Dual P-channel MOSFET transistor for power management and control applications.

Product Features and Performance

2 P-channel MOSFET transistors in a single package

Low on-resistance (Rds(on)) of 37 mΩ at 2.5 A, 4.5 V

12 V drain-to-source voltage rating

5 A continuous drain current at 25°C

2 W maximum power dissipation

1300 pF maximum input capacitance

12 nC maximum gate charge at 4.5 V

Product Advantages

Compact 8-SMD package for space-saving design

Logic-level gate drive for easy microcontroller interface

Improved power efficiency and thermal performance

Key Technical Parameters

Drain-to-Source Voltage (Vds): 12 V

On-Resistance (Rds(on)): 37 mΩ @ 2.5 A, 4.5 V

Continuous Drain Current (Id): 5 A @ 25°C

Power Dissipation: 1.2 W

Input Capacitance (Ciss): 1300 pF @ 6 V

Gate Charge (Qg): 12 nC @ 4.5 V

Quality and Safety Features

Manufactured using advanced MOSFET technology for reliable performance

Compliant with RoHS and other environmental regulations

Compatibility

Suitable for use in a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Battery management systems

Lighting control

Industrial automation

Product Lifecycle

The EMH2314-TL-H is an active product and is not nearing discontinuation.

Replacements and upgrades may be available as technology evolves.

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact 8-SMD package for space-saving design

Logic-level gate drive for easy microcontroller interface

Proven reliability and quality from onsemi

Suitability for a wide range of power management and control applications