Manufacturer Part Number
EMG2DXV5T1G
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Bipolar junction transistor (BJT) array, pre-biased
Dual NPN transistor package
Product Features and Performance
Power rating: 230mW
Collector-emitter breakdown voltage: 50V
Collector current: 100mA max
Collector cutoff current: 500nA max
Collector-emitter saturation voltage: 250mV @ 10mA, 300μA
DC current gain: 80 min @ 5mA, 10V
Built-in base and emitter resistors: 47kΩ each
Product Advantages
Pre-biased design for easy implementation
Space-saving surface mount package
Suitable for low-power, high-density circuit designs
Key Technical Parameters
Package: SOT-553
Mounting type: Surface mount
Quality and Safety Features
RoHS compliant
Compatibility
Compatible with various electronic circuit designs that require a pre-biased NPN transistor array
Application Areas
Low-power analog and digital circuits
Switches, amplifiers, logic gates, and other basic transistor functions
Product Lifecycle
Active product, no signs of discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Pre-biased design for simplified circuit implementation
Compact surface mount package for high-density layouts
Reliable performance within the specified electrical and thermal limits
RoHS compliance for use in environmentally-conscious applications
Availability of replacement or upgrade options from the manufacturer
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