EMC5DXV5T1G - onsemi

Manufacturer Part Number

EMC5DXV5T1G

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device that features a pre-biased transistor array, consisting of one NPN and one PNP bipolar junction transistor (BJT).

Product Features and Performance

Power rating of 500mW

Collector-emitter breakdown voltage up to 50V

Collector current up to 100mA

Collector cutoff current of 500nA

Low collector-emitter saturation voltage of 250mV at 10mA collector current

DC current gain (hFE) of 80 minimum at 5mA, 10V for the NPN and 20 minimum at 5mA, 10V for the PNP

Internal base resistors of 47kΩ and 4.7kΩ for the NPN, and 47kΩ and 10kΩ for the PNP

Product Advantages

Compact surface mount package (SOT-553)

Pre-biased design simplifies circuit design

Balanced NPN and PNP characteristics

Key Technical Parameters

Package: SOT-553

Power rating: 500mW

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Collector cutoff current: 500nA

Collector-emitter saturation voltage: 250mV

DC current gain (hFE): 80 (NPN), 20 (PNP)

Internal base resistors: 47kΩ, 4.7kΩ (NPN), 47kΩ, 10kΩ (PNP)

Quality and Safety Features

RoHS3 compliant

Compatibility

This device is compatible with standard surface mount assembly processes.

Application Areas

General-purpose amplifier and switching circuits

Biasing and level-shifting circuits

Logic gates and buffer circuits

Product Lifecycle

The EMC5DXV5T1G is an active product and is not nearing discontinuation. Replacement or upgraded models may become available in the future.

Key Reasons to Choose This Product

Compact surface mount package

Balanced NPN and PNP characteristics for simplified circuit design

Pre-biased design for reduced external component count

RoHS3 compliance for environmental responsibility

Suitable for a wide range of general-purpose amplifier and switching applications