Manufacturer Part Number
ECH8695R-TL-W
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET in a surface mount package
Product Features and Performance
24V drain-to-source voltage rating
1mΩ maximum on-resistance at 5A, 4.5V
11A continuous drain current at 25°C
Logic-level gate with 2.5V drive
10nC maximum gate charge at 4.5V
Product Advantages
Compact surface mount package
Low on-resistance for efficient power conversion
Logic-level gate for easy microcontroller interfacing
Suitable for a variety of power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 24V
On-Resistance (Rds(on)): 9.1mΩ @ 5A, 4.5V
Drain Current (Id): 11A continuous at 25°C
Gate Threshold Voltage (Vgs(th)): 1.3V @ 1mA
Gate Charge (Qg): 10nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with various power management and control applications
Application Areas
Power management circuits
Motor control
Battery charging and discharging
LED driving
General purpose switching
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from the manufacturer
Key Reasons to Choose This Product
Compact surface mount package
Low on-resistance for efficient power conversion
Logic-level gate for easy microcontroller interfacing
Suitable for a wide range of power management applications
Reliable high-temperature operation
Availability of replacements and upgrades from the manufacturer
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