Manufacturer Part Number
ECH8655R-TL-H
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET Array in 8-SMD Package
Product Features and Performance
24V Drain-to-Source Voltage (Vdss)
17mΩ On-Resistance (Rds(on)) @ 4.5A, 4.5V
9A Continuous Drain Current (ID) @ 25°C
8nC Gate Charge (Qg) @ 10V
150°C Maximum Junction Temperature (TJ)
5W Power Dissipation
Product Advantages
Compact 8-SMD package
Logic-level gate drive
Suitable for power management and switching applications
Key Technical Parameters
Voltage: 24V Drain-to-Source Voltage (Vdss)
Current: 9A Continuous Drain Current (ID)
Resistance: 17mΩ On-Resistance (Rds(on))
Charge: 16.8nC Gate Charge (Qg)
Temperature: 150°C Maximum Junction Temperature (TJ)
Power: 1.5W Power Dissipation
Quality and Safety Features
RoHS3 compliant
Industrial-grade quality and reliability
Compatibility
Suitable for surface mount applications
Application Areas
Power management
Switching circuits
General-purpose logic-level control
Product Lifecycle
No information on discontinuation or replacements
Key Reasons to Choose
Compact 8-SMD package
Low on-resistance for efficient power switching
High current handling capability
Suitable for high-temperature environments
Logic-level gate drive for easy implementation
ECH8655R-LT-HAMI Semiconductor/onsemi