Manufacturer Part Number
DTC144EET1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single, Pre-Biased
Product Features and Performance
Low power consumption (200mW max)
High breakdown voltage (50V max collector-emitter voltage)
Moderate collector current (100mA max)
Low collector cutoff current (500nA max)
Low collector-emitter saturation voltage (250mV @ 10mA)
Moderate DC current gain (80 min @ 5mA, 10V)
Integrated base and emitter resistors (47kOhms each)
Product Advantages
Pre-biased for simplified circuit design
Surface mount package for compact assembly
Suitable for various low-power analog and digital applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor Base (R1): 47kOhms
Resistor Emitter Base (R2): 47kOhms
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface mount SC-75, SOT-416 package
Application Areas
Analog and digital low-power circuits
Switching and amplifier applications
General-purpose electronics
Product Lifecycle
Current production model, no discontinuation plans
Several Key Reasons to Choose This Product
Optimized power efficiency with low power consumption
Robust voltage and current handling capabilities
Simplified design with integrated bias resistors
Compact surface mount package for space-constrained designs
Suitable for a wide range of low-power electronic applications