DTC143TM3T5G - onsemi

Manufacturer Part Number

DTC143TM3T5G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

Low power dissipation of 260 mW

High collector-emitter breakdown voltage of 50 V

High collector current of 100 mA

Low collector cutoff current of 500 nA

Low collector-emitter saturation voltage of 250 mV

High DC current gain of 160 minimum

Built-in 4.7 kOhm base resistor

Product Advantages

Efficient power handling

High voltage and current capability

Low leakage current

Optimized switching characteristics

Integrated base resistor for simplified biasing

Key Technical Parameters

Collector-Emitter Voltage (VCEO): 50 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 500 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 250 mV

DC Current Gain (hFE): 160 min

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

Surface mount (SMT) package: SOT-723

Application Areas

General-purpose switching and amplification in electronic circuits

Suitable for use in low-power analog and digital applications

Product Lifecycle

Current production, no indication of discontinuation

Replacements and upgrades may be available as technology evolves

Key Reasons to Choose This Product

Efficient power handling and high voltage/current capability

Low leakage current and optimized switching characteristics

Integrated base resistor for simplified biasing

Compact surface mount package

RoHS3 compliance for environmental friendliness

Availability in standard tape and reel packaging