Manufacturer Part Number
DTC143TM3T5G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, Pre-Biased
Product Features and Performance
Low power dissipation of 260 mW
High collector-emitter breakdown voltage of 50 V
High collector current of 100 mA
Low collector cutoff current of 500 nA
Low collector-emitter saturation voltage of 250 mV
High DC current gain of 160 minimum
Built-in 4.7 kOhm base resistor
Product Advantages
Efficient power handling
High voltage and current capability
Low leakage current
Optimized switching characteristics
Integrated base resistor for simplified biasing
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 50 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 500 nA
Collector-Emitter Saturation Voltage (VCE(sat)): 250 mV
DC Current Gain (hFE): 160 min
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Surface mount (SMT) package: SOT-723
Application Areas
General-purpose switching and amplification in electronic circuits
Suitable for use in low-power analog and digital applications
Product Lifecycle
Current production, no indication of discontinuation
Replacements and upgrades may be available as technology evolves
Key Reasons to Choose This Product
Efficient power handling and high voltage/current capability
Low leakage current and optimized switching characteristics
Integrated base resistor for simplified biasing
Compact surface mount package
RoHS3 compliance for environmental friendliness
Availability in standard tape and reel packaging
DTC143TLUTC