Manufacturer Part Number
DTC143TET1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, Pre-Biased
Product Features and Performance
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 250 mV @ 1 mA, 10 mA
DC Current Gain (hFE): 160 min @ 5 mA, 10 V
Base Resistor: 4.7 kΩ
Surface Mount Package: SC-75, SOT-416
Product Advantages
Pre-Biased for simplified circuit design
Compact surface mount package
Excellent electrical characteristics
Key Technical Parameters
Power Rating
Breakdown Voltage
Collector Current
Saturation Voltage
DC Current Gain
Base Resistor Value
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with standard bipolar transistor circuits
Application Areas
General-purpose amplifier and switching applications
Biasing circuits
Low-power electronic devices
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Pre-biased for simplified design
Compact surface mount package
Excellent electrical specifications
RoHS3 compliance
Compatibility with standard bipolar transistor circuits
Suitable for general-purpose amplifier and switching applications