Manufacturer Part Number
DTC124EM3T5G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single, Pre-Biased
Product Features and Performance
Power Rating: 260 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 500 nA
Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA
DC Current Gain: 60 @ 5 mA, 10 V
Built-in Base and Emitter Resistors: 22 kΩ each
Product Advantages
Pre-biased configuration for simple circuit design
Surface mount package for compact assembly
RoHS3 compliant
Key Technical Parameters
Transistor Type: NPN Pre-Biased
Mounting Type: Surface Mount
Package: SOT-723, Tape & Reel
Quality and Safety Features
RoHS3 Compliant
Compatibility
Can be used in a wide range of electronic circuits and applications
Application Areas
General-purpose amplification and switching in electronic circuits
Product Lifecycle
Current product offering, no discontinuation announced
Key Reasons to Choose
Pre-biased configuration for simple circuit design
Compact surface mount package
RoHS3 compliance for environmental responsibility
Suitable for a variety of electronic circuit applications
