DTC124EM3T5G - onsemi

Manufacturer Part Number

DTC124EM3T5G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single, Pre-Biased

Product Features and Performance

Power Rating: 260 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cutoff Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA

DC Current Gain: 60 @ 5 mA, 10 V

Built-in Base and Emitter Resistors: 22 kΩ each

Product Advantages

Pre-biased configuration for simple circuit design

Surface mount package for compact assembly

RoHS3 compliant

Key Technical Parameters

Transistor Type: NPN Pre-Biased

Mounting Type: Surface Mount

Package: SOT-723, Tape & Reel

Quality and Safety Features

RoHS3 Compliant

Compatibility

Can be used in a wide range of electronic circuits and applications

Application Areas

General-purpose amplification and switching in electronic circuits

Product Lifecycle

Current product offering, no discontinuation announced

Key Reasons to Choose

Pre-biased configuration for simple circuit design

Compact surface mount package

RoHS3 compliance for environmental responsibility

Suitable for a variety of electronic circuit applications