Manufacturer Part Number
DTC124EET1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single, Pre-Biased
Product Features and Performance
200 mW power rating
50 V collector-emitter breakdown voltage
100 mA maximum collector current
500 nA maximum collector cutoff current
250 mV maximum collector-emitter saturation voltage at 10 mA collector current
60 minimum DC current gain at 5 mA collector current
22 kΩ base and emitter-base resistors
Product Advantages
Pre-biased design for simplified circuit design
Small footprint in SC-75 and SOT-416 packages
Tape and reel packaging for automated assembly
Key Technical Parameters
NPN transistor type
Surface mount packaging
RoHS3 compliant
Quality and Safety Features
Robust design for reliable operation
Compliant with RoHS3 regulations
Compatibility
Suitable for a variety of electronic circuit applications
Application Areas
Amplifiers, switches, and logic circuits
Consumer and industrial electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Pre-biased design for simplified circuit implementation
Compact package options for space-constrained designs
Reliable performance with RoHS3 compliance
Suitable for a wide range of electronic applications
DTC124ECA-7Diodes Incorporated