DTC123JET1G - onsemi

Manufacturer Part Number

DTC123JET1G

Manufacturer

onsemi

Introduction

The DTC123JET1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of analog and digital circuit applications.

Product Features and Performance

Rated for a maximum collector-emitter voltage of 50V

Supports a maximum collector current of 100mA

Exhibits a minimum DC current gain (hFE) of 80 at 5mA and 10V

Features on-chip base and emitter resistors of 2.2kΩ and 47kΩ, respectively

Capable of dissipating up to 200mW of power

Product Advantages

Pre-biased design simplifies circuit design and reduces component count

Surface mount package (SC-75, SOT-416) enables compact PCB layouts

RoHS3 compliance for environmentally friendly applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 100mA

Collector Cutoff Current (ICBO): 500nA

Collector-Emitter Saturation Voltage (VCE(sat)): 250mV @ 1mA, 10mA

Base Resistor (R1): 2.2kΩ

Emitter-Base Resistor (R2): 47kΩ

Quality and Safety Features

RoHS3 compliant for environmentally friendly use

Robust surface mount package construction for reliable operation

Compatibility

The DTC123JET1G is a direct replacement for similar pre-biased NPN BJTs in a variety of analog and digital circuit designs.

Application Areas

General-purpose analog and digital circuits

Switch mode power supplies

Amplifier and driver stages

Logic gates and buffers

Sensor and control applications

Product Lifecycle

The DTC123JET1G is an active product in onsemi's portfolio and is not nearing discontinuation. Replacement or upgrade options are available as needed.

Key Reasons to Choose This Product

Pre-biased design simplifies circuit implementation

Compact surface mount package for space-constrained designs

Robust electrical and thermal performance specifications

RoHS3 compliance for environmentally conscious applications

Readily available and well-supported by onsemi