DTC123EET1G - onsemi

Manufacturer Part Number

DTC123EET1G

Manufacturer

onsemi

Introduction

The DTC123EET1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of small-signal and switching applications.

Product Features and Performance

Power rating of 200 mW

Collector-emitter breakdown voltage (VCEO) of 50 V

Collector current (IC) of up to 100 mA

Collector cutoff current (ICEO) of 500 nA

Saturation voltage (VCE(sat)) of 250 mV at 5 mA and 10 mA collector current

DC current gain (hFE) of at least 8 at 5 mA and 10 V collector-emitter voltage

Integrated base and emitter resistors of 2.2 kΩ each

Product Advantages

Pre-biased configuration simplifies circuit design

Small, surface-mount SC-75 and SOT-416 package options

ROHS3 compliant

Key Technical Parameters

Voltage: Collector-Emitter Breakdown Voltage (VCEO) of 50 V

Current: Collector Current (IC) of up to 100 mA

Power: Power Rating of 200 mW

Gain: DC Current Gain (hFE) of at least 8

Resistors: Integrated Base and Emitter Resistors of 2.2 kΩ

Quality and Safety Features

ROHS3 compliant

Compatibility

Surface mount package options: SC-75, SOT-416

Tape and reel packaging

Application Areas

Small-signal amplifiers

Switching circuits

Logic gates

Driver stages

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available from onsemi

Several Key Reasons to Choose This Product

Pre-biased configuration for simplified circuit design

Compact surface-mount package options

Suitable for a variety of small-signal and switching applications

Reliable performance with key technical parameters like high breakdown voltage, collector current, and current gain

ROHS3 compliance for environmental considerations