Manufacturer Part Number
DTC123EET1G
Manufacturer
onsemi
Introduction
The DTC123EET1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of small-signal and switching applications.
Product Features and Performance
Power rating of 200 mW
Collector-emitter breakdown voltage (VCEO) of 50 V
Collector current (IC) of up to 100 mA
Collector cutoff current (ICEO) of 500 nA
Saturation voltage (VCE(sat)) of 250 mV at 5 mA and 10 mA collector current
DC current gain (hFE) of at least 8 at 5 mA and 10 V collector-emitter voltage
Integrated base and emitter resistors of 2.2 kΩ each
Product Advantages
Pre-biased configuration simplifies circuit design
Small, surface-mount SC-75 and SOT-416 package options
ROHS3 compliant
Key Technical Parameters
Voltage: Collector-Emitter Breakdown Voltage (VCEO) of 50 V
Current: Collector Current (IC) of up to 100 mA
Power: Power Rating of 200 mW
Gain: DC Current Gain (hFE) of at least 8
Resistors: Integrated Base and Emitter Resistors of 2.2 kΩ
Quality and Safety Features
ROHS3 compliant
Compatibility
Surface mount package options: SC-75, SOT-416
Tape and reel packaging
Application Areas
Small-signal amplifiers
Switching circuits
Logic gates
Driver stages
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Several Key Reasons to Choose This Product
Pre-biased configuration for simplified circuit design
Compact surface-mount package options
Suitable for a variety of small-signal and switching applications
Reliable performance with key technical parameters like high breakdown voltage, collector current, and current gain
ROHS3 compliance for environmental considerations
DTC123EEYangjie TechnologyTransistors - Bipolar (BJT) - Si