Manufacturer Part Number
DTC115EM3T5G
Manufacturer
onsemi
Introduction
The DTC115EM3T5G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of general-purpose amplification and switching applications.
Product Features and Performance
Power rating of 260 mW
Collector-emitter breakdown voltage of 50 V
Maximum collector current of 100 mA
Collector cutoff current of 500 nA
Vce saturation voltage of 250 mV at 10 mA collector current
DC current gain (hFE) of at least 80 at 5 mA collector current
Product Advantages
Pre-biased design simplifies circuit design
Surface mount package (SOT-723) for compact assembly
Reliable performance and high stability
Key Technical Parameters
Transistor type: NPN, pre-biased
Collector-emitter breakdown voltage: 50 V
Collector current: 100 mA
Collector cutoff current: 500 nA
Vce saturation voltage: 250 mV
DC current gain (hFE): 80 minimum
Quality and Safety Features
RoHS3 compliant
Reliable performance and high stability
Compatibility
Surface mount (SOT-723) package
Suitable for a variety of general-purpose amplification and switching applications
Application Areas
General-purpose amplification
Switching circuits
Electronic devices and equipment
Product Lifecycle
The DTC115EM3T5G is an active product, with no indication of discontinuation.
Replacement or upgrade options may be available from onsemi as technology advances.
Key Reasons to Choose This Product
Pre-biased design for simplified circuit design
Reliable performance and high stability
Compact surface mount package for space-constrained applications
RoHS3 compliance for use in environmentally-friendly applications