Manufacturer Part Number
DTC115EET1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, Pre-Biased
Product Features and Performance
Maximum Power: 200 mW
Collector-Emitter Breakdown Voltage (Max): 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage (Max): 250 mV
DC Current Gain (Min): 80
Base Resistor: 100 kΩ
Emitter-Base Resistor: 100 kΩ
Product Advantages
Pre-biased design for easy use
Efficient power handling
Robust voltage and current capabilities
Key Technical Parameters
Transistor Type: NPN, Pre-Biased
Packaging: SC-75, SOT-416
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General-purpose amplification and switching in electronic circuits
Suitable for use in consumer electronics, industrial controls, and more
Product Lifecycle
This product is currently in active production and availability is good.
Key Reasons to Choose This Product
Reliable pre-biased design for easy implementation
Excellent power handling and voltage/current capabilities
Compact surface-mount packaging for space-constrained designs
RoHS compliance for environmentally-friendly applications
DTC115EMCJ