Manufacturer Part Number
DTC114YET1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single, Pre-Biased
Product Features and Performance
Low power, high gain NPN pre-biased transistor
Optimized for small-signal, low-noise amplifier applications
Designed for surface mount technology (SMT) assembly
Product Advantages
Pre-biased configuration simplifies circuit design
Low noise and distortion performance
Compact surface mount packaging
Key Technical Parameters
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current: 500 nA
Collector-Emitter Saturation Voltage: 250 mV @ 10 mA
DC Current Gain: 80 min @ 5 mA, 10 V
Base Resistor: 10 kΩ
Emitter-Base Resistor: 47 kΩ
Quality and Safety Features
RoHS3 compliant
Reliable surface mount packaging (SC-75, SOT-416)
Compatibility
Suitable for surface mount technology (SMT) assembly
Application Areas
Small-signal, low-noise amplifier circuits
Switching and logic circuits
General-purpose transistor applications
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Pre-biased configuration for simplified circuit design
High gain and low noise performance
Compact surface mount packaging for space-constrained designs
RoHS3 compliance for environmentally friendly applications
Reliable and widely compatible surface mount technology