DTC114TM3T5G - onsemi

Manufacturer Part Number

DTC114TM3T5G

Manufacturer

onsemi

Introduction

The DTC114TM3T5G is a NPN bipolar junction transistor (BJT) with a built-in base resistor, designed for use in a variety of electronic circuits.

Product Features and Performance

Pre-biased NPN transistor

Low collector-emitter saturation voltage

High DC current gain

Low collector cutoff current

Low power dissipation

Product Advantages

Compact SOT-723 package

Integrated base resistor for simplified circuit design

Suitable for high-volume, cost-sensitive applications

Robust and reliable performance

Key Technical Parameters

Power rating: 260 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

DC current gain (min): 160 @ 5 mA, 10 V

Base resistor value: 10 kΩ

Quality and Safety Features

RoHS3 compliant

Manufactured in ISO-certified facilities

Consistent quality and reliability

Compatibility

The DTC114TM3T5G is compatible with a wide range of electronic circuits and can be used as a replacement for similar NPN bipolar transistors.

Application Areas

Amplifier circuits

Switching circuits

Logic gates

Biasing circuits

General-purpose electronics

Product Lifecycle

The DTC114TM3T5G is an actively supported product in the onsemi portfolio. Replacement or upgrade options may be available in the future, but the current product is not nearing discontinuation.

Key Reasons to Choose This Product

Reliable and consistent performance

Compact and space-saving package

Simplified circuit design with integrated base resistor

Suitable for cost-sensitive, high-volume applications

Robust and RoHS3 compliant construction

Backed by onsemi's quality and technical support