Manufacturer Part Number
DTC114TM3T5G
Manufacturer
onsemi
Introduction
The DTC114TM3T5G is a NPN bipolar junction transistor (BJT) with a built-in base resistor, designed for use in a variety of electronic circuits.
Product Features and Performance
Pre-biased NPN transistor
Low collector-emitter saturation voltage
High DC current gain
Low collector cutoff current
Low power dissipation
Product Advantages
Compact SOT-723 package
Integrated base resistor for simplified circuit design
Suitable for high-volume, cost-sensitive applications
Robust and reliable performance
Key Technical Parameters
Power rating: 260 mW
Collector-emitter breakdown voltage: 50 V
Collector current (max): 100 mA
Collector cutoff current (max): 500 nA
DC current gain (min): 160 @ 5 mA, 10 V
Base resistor value: 10 kΩ
Quality and Safety Features
RoHS3 compliant
Manufactured in ISO-certified facilities
Consistent quality and reliability
Compatibility
The DTC114TM3T5G is compatible with a wide range of electronic circuits and can be used as a replacement for similar NPN bipolar transistors.
Application Areas
Amplifier circuits
Switching circuits
Logic gates
Biasing circuits
General-purpose electronics
Product Lifecycle
The DTC114TM3T5G is an actively supported product in the onsemi portfolio. Replacement or upgrade options may be available in the future, but the current product is not nearing discontinuation.
Key Reasons to Choose This Product
Reliable and consistent performance
Compact and space-saving package
Simplified circuit design with integrated base resistor
Suitable for cost-sensitive, high-volume applications
Robust and RoHS3 compliant construction
Backed by onsemi's quality and technical support