DTC114EET1G - onsemi

Manufacturer Part Number

DTC114EET1G

Manufacturer

onsemi

Introduction

Single, pre-biased NPN bipolar junction transistor (BJT)

Product Features and Performance

Low power dissipation of 200 mW

Collector-emitter breakdown voltage of 50 V

Collector current up to 100 mA

Collector cutoff current of 500 nA

Low collector-emitter saturation voltage of 250 mV at 10 mA collector current

DC current gain of 35 at 5 mA collector current

On-chip base and emitter resistors of 10 kΩ each

Surface mount package (SC-75, SOT-416)

Product Advantages

Pre-biased design simplifies circuit design

Compact surface mount package

Reliable performance in a wide range of applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5 mA, 10 V

Resistor Base (R1): 10 kΩ

Resistor Emitter Base (R2): 10 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable surface mount packaging (SC-75, SOT-416)

Compatibility

Suitable for a wide range of electronic applications requiring a pre-biased NPN BJT

Application Areas

Amplifiers

Switches

Logic circuits

Biasing circuits

General-purpose electronics

Product Lifecycle

Current product offering, no indication of discontinuation

Replacement and upgrade options available from onsemi

Several Key Reasons to Choose This Product

Pre-biased design simplifies circuit design and reduces component count

Compact surface mount package for space-constrained applications

Reliable performance with high voltage and current capabilities

RoHS3 compliance for environmental safety

Wide range of compatible applications