DTA143ZET1G - onsemi

Manufacturer Part Number

DTA143ZET1G

Manufacturer

onsemi

Introduction

This product is a single, pre-biased, PNP bipolar junction transistor (BJT) in a small surface-mount package.

Product Features and Performance

Power rating of 200 mW

Collector-emitter breakdown voltage of 50 V

Collector current (max) of 100 mA

Collector cutoff current (max) of 500 nA

Collector-emitter saturation voltage of 250 mV at 10 mA collector current

DC current gain (hFE) of at least 80 at 5 mA collector current and 10 V collector-emitter voltage

Internal base resistors of 4.7 kΩ and 47 kΩ

Product Advantages

Pre-biased design simplifies circuit design

Small surface-mount package

RoHS3 compliant

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V

Resistor Base (R1): 4.7 kΩ

Resistor Emitter Base (R2): 47 kΩ

Quality and Safety Features

RoHS3 compliant

Compatibility

This transistor is compatible with standard surface-mount assembly processes.

Application Areas

Amplifiers

Switches

Biasing circuits

General-purpose electronic circuits

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Pre-biased design simplifies circuit design

Small surface-mount package

RoHS3 compliant

Reliable performance with well-defined technical parameters

Suitable for a wide range of electronic applications