Manufacturer Part Number
DTA123JET1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, Pre-Biased
Product Features and Performance
Low power, 200 mW max
Voltage rating up to 50 V
Current rating up to 100 mA
Low collector cutoff current of 500 nA
Low collector-emitter saturation voltage of 250 mV
DC current gain (hFE) of at least 80
Product Advantages
Pre-biased for simplified circuit design
Compact surface mount package
RoHS3 compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (max): 100 mA
Collector Cutoff Current (max): 500 nA
Collector-Emitter Saturation Voltage: 250 mV
DC Current Gain (hFE): 80 min
Base Resistor (R1): 2.2 kΩ
Emitter-Base Resistor (R2): 47 kΩ
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package
Compatibility
Suitable for various electronic circuit applications
Application Areas
Amplifiers
Switches
Logic circuits
Current sources
Pull-up resistors
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Pre-biased for simplified circuit design
Compact surface mount package
Reliable performance with low power and high voltage/current ratings
RoHS3 compliance for environmentally-friendly use
Suitable for a wide range of electronic circuit applications
DTA123JKALAPIS Technology