DTA115EET1G - onsemi

Manufacturer Part Number

DTA115EET1G

Manufacturer

onsemi

Introduction

This is a bipolar junction transistor (BJT) that is pre-biased, meaning it has built-in resistors to provide a defined operating point.

Product Features and Performance

Operates at a maximum power of 200 mW

Supports a maximum collector-emitter voltage of 50 V

Handles a maximum collector current of 100 mA

Has a maximum collector cutoff current of 500 nA

Exhibits a maximum collector-emitter saturation voltage of 250 mV at 10 mA collector current

Provides a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage

Has built-in 100 kΩ base and emitter-base resistors

Product Advantages

Pre-biased design simplifies circuit design

Compact surface-mount package

Reliable performance in a wide range of applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 3 mA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V

Resistor Base (R1): 100 kΩ

Resistor Emitter Base (R2): 100 kΩ

Quality and Safety Features

RoHS3 compliant

Compatibility

Packaged in an SC-75, SOT-416 surface-mount package

Available in tape and reel format

Application Areas

Suitable for a variety of low-power analog and digital circuit applications

Product Lifecycle

This is an active product and is not nearing discontinuation.

Replacements and upgrades may be available from onsemi.

Several Key Reasons to Choose This Product

Pre-biased design simplifies circuit design and reduces external component count

Compact surface-mount package suitable for space-constrained applications

Reliable performance in a wide range of operating conditions

RoHS3 compliance for use in environmentally-friendly applications

Availability in tape and reel format for efficient manufacturing processes