DTA114YET1G - onsemi

Manufacturer Part Number

DTA114YET1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

Low Power Consumption: 200 mW Max

High Voltage Capability: 50 V Collector-Emitter Breakdown Voltage

High Current Capability: 100 mA Collector Current Max

Low Collector Cutoff Current: 500 nA Max

Low Saturation Voltage: 250 mV @ 10 mA Collector Current

Pre-Biased Design with Integrated Resistors

Product Advantages

Compact Surface Mount Packaging

Reliable and Rugged Construction

Suitable for Space-Constrained Applications

Simplifies Circuit Design with Pre-Biased Configuration

Key Technical Parameters

Transistor Type: PNP, Pre-Biased

DC Current Gain (hFE): 80 Min @ 5 mA, 10 V

Base Resistor (R1): 10 kΩ

Emitter-Base Resistor (R2): 47 kΩ

Quality and Safety Features

RoHS3 Compliant

Reliable Automotive-Grade Quality

Compatibility

Suitable for a Wide Range of Electronic Circuits and Applications

Application Areas

Amplifiers

Switches

Biasing Circuits

Consumer Electronics

Industrial Controls

Product Lifecycle

Current and Actively Supported Product

Replacements and Upgrades Available

Key Reasons to Choose This Product

Compact and Space-Saving Surface Mount Package

Integrated Resistors for Simplified Circuit Design

Reliable and Rugged Construction

Suitable for a Variety of Electronic Applications

Automotive-Grade Quality and RoHS3 Compliance