Manufacturer Part Number
DTA114EET1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, Pre-Biased
Product Features and Performance
Low power consumption (Max 200 mW)
High voltage capability (Max 50 V Collector-Emitter Breakdown Voltage)
High current handling (Max 100 mA Collector Current)
Low leakage current (Max 500 nA Collector Cutoff Current)
Low saturation voltage (Max 250 mV @ 10 mA Collector Current)
Wide range of DC Current Gain (Min 35 @ 5 mA, 10 V)
On-chip base and emitter resistors (10 kΩ each)
Surface mount package (SC-75, SOT-416)
Product Advantages
Compact surface mount package
Pre-biased design for easy use
Wide operating voltage and current range
Reliable and robust performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5 mA, 10 V
Resistor Base (R1): 10 kΩ
Resistor Emitter Base (R2): 10 kΩ
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with various electronic circuit designs requiring a pre-biased PNP bipolar transistor
Application Areas
Analog and digital circuits
Amplifier and switching applications
Power management
Sensor and control systems
Product Lifecycle
Current production model, no plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Compact surface mount package for space-constrained designs
Pre-biased design simplifies circuit implementation
Wide operating voltage and current range for versatile applications
Reliable and robust performance with low power consumption
RoHS3 compliance for environmentally-friendly use
DTA114EG-AE3-RUTC