Manufacturer Part Number
D44VH10G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT)
Single Transistor
Product Features and Performance
High Power Handling Capability (83 W)
High Voltage Tolerance (80 V Collector-Emitter Breakdown Voltage)
High Current Capability (15 A Collector Current)
High Gain (Minimum DC Current Gain of 20 @ 4 A, 1 V)
High Frequency Operation (50 MHz Transition Frequency)
Wide Operating Temperature Range (-55°C to 150°C)
Product Advantages
Excellent power handling and voltage/current capability
High current gain for efficient amplification
Wide operating temperature range for versatile applications
Robust through-hole package (TO-220) for secure mounting
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 80 V
Collector Current (Max): 15 A
Collector-Emitter Saturation Voltage: 400 mV @ 400 mA, 8 A
DC Current Gain (hFE): Minimum 20 @ 4 A, 1 V
Transition Frequency: 50 MHz
Quality and Safety Features
RoHS3 compliant for environmental safety
Reliable through-hole mounting in TO-220 package
Compatibility
Suitable for a wide range of power amplification and switching applications
Application Areas
Power amplifiers
Motor drives
Switching regulators
Industrial control equipment
Product Lifecycle
Current product offering, no discontinuation planned
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and voltage/current capability
High current gain for efficient amplification
Wide operating temperature range for versatile applications
Robust through-hole package for secure mounting
RoHS3 compliance for environmental safety
Suitable for a variety of power electronics applications