Manufacturer Part Number
CPH6636R-TL-W
Manufacturer
onsemi
Introduction
This product is a Discrete Semiconductor device, specifically a Transistor - FET, MOSFET - Array.
Product Features and Performance
RoHS3 compliant
2 N-Channel (Dual) Common Drain configuration
Drain to Source Voltage (Vdss) of 24V
On-Resistance (Rds On) of 20mOhm @ 3A, 4.5V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id) of 6A @ 25°C
Logic Level Gate, 2.5V Drive
Gate Charge (Qg) of 3nC @ 4.5V
Operating Temperature up to 150°C (TJ)
Power Rating of 900mW
Product Advantages
High current handling capability
Low on-resistance for improved efficiency
Logic level gate drive for easy interfacing
Compact SOT-23-6 Thin, TSOT-23-6 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 24V
On-Resistance (Rds On): 20mOhm @ 3A, 4.5V
Continuous Drain Current (Id): 6A @ 25°C
Gate Charge (Qg): 3nC @ 4.5V
Operating Temperature: 150°C (TJ)
Power Rating: 900mW
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface Mount package (SOT-23-6 Thin, TSOT-23-6)
Tape & Reel (TR) packaging
Application Areas
Power management
Motor control
Switching applications
General-purpose amplification and switching
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High current handling capability for efficient power management
Low on-resistance for improved efficiency and performance
Logic level gate drive for easy interfacing with control systems
Compact and space-saving package options
RoHS3 compliance for environmental responsibility
Suitable for a wide range of applications, including power management, motor control, and general switching.