Manufacturer Part Number
CPH6443-TL-W
Manufacturer
onsemi
Introduction
N-Channel MOSFET transistor in a SOT-23-6 Thin, TSOT-23-6 package.
Product Features and Performance
Drain to Source Voltage (Vdss): 35 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 37 mOhm @ 3 A, 10 V
Current Continuous Drain (Id) @ 25°C: 6 A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
Power Dissipation (Max): 1.6 W (Ta)
Vgs(th) (Max) @ Id: 2.6 V @ 1 mA
Drive Voltage (Max Rds On, Min Rds On): 4 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Product Advantages
Low on-resistance for efficient power handling
High current capability
Compact surface mount SOT-23-6 Thin, TSOT-23-6 package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Suitable for use in power management, switching, and control circuits
Product Lifecycle
This is an active product, with no indication of discontinuation or availability of replacements or upgrades.
Several Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power handling
Compact surface mount package
RoHS3 compliance for environmental safety
Widely compatible with a range of electronic applications