Manufacturer Part Number
CPH6347-TL-H
Manufacturer
onsemi
Introduction
High-performance P-channel MOSFET transistor designed for use in power management, switching, and control applications.
Product Features and Performance
P-channel MOSFET transistor
Drain-to-Source Voltage (Vdss) of 20V
Gate-to-Source Voltage (Vgs) of ±12V
On-Resistance (Rds(on)) of 39mΩ at 3A and 4.5V
Continuous Drain Current (Id) of 6A at 25°C
Input Capacitance (Ciss) of 860pF at 10V
Power Dissipation (Pd) of 1.6W at 25°C
Product Advantages
Low on-resistance for high efficiency
High drain current handling capability
Suitable for power management, switching, and control applications
Small surface-mount SOT-23-6 package
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg): 10.5nC at 4.5V
Mounting Type: Surface Mount
Quality and Safety Features
Designed and manufactured to meet high-quality standards
Robust construction for reliable performance
Compatibility
Suitable for use in a wide range of electronic devices and power management systems
Application Areas
Power management
Switching circuits
Control applications
Product Lifecycle
This product is an active and regularly stocked item from the manufacturer.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current handling
Compact surface-mount package for efficient board layout
Reliable and durable construction for long-term use
Compatibility with a wide range of applications and systems