CPH6123-TL-E - onsemi

Manufacturer Part Number

CPH6123-TL-E

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor (BJT) suitable for a variety of applications.

Product Features and Performance

High current handling capability up to 3A

High current gain of 200 (min) at 100mA, 2V

Wide voltage range up to 50V collector-emitter breakdown voltage

High transition frequency of 390MHz

Low collector-emitter saturation voltage of 650mV at 100mA, 2A

Operates at high temperatures up to 150°C

Product Advantages

Excellent power handling and high-frequency performance

Suitable for a wide range of power amplifier, switching, and control applications

Compact surface mount package

Key Technical Parameters

Power rating: 1.3W

Collector-emitter breakdown voltage: 50V (max)

Collector current: 3A (max)

Collector cutoff current: 1A (max)

Current gain: 200 (min) at 100mA, 2V

Transition frequency: 390MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in high-temperature environments

Compatibility

Suitable for surface mount applications

Application Areas

Power amplifiers

Switching circuits

Control applications

Industrial and consumer electronics

Product Lifecycle

This product is currently in active production

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

High current handling and power capability

Excellent high-frequency performance

Wide operating voltage and temperature range

Compact surface mount package

Reliable RoHS3 compliant construction