Manufacturer Part Number
CPH3105-TL-E
Manufacturer
onsemi
Introduction
High-performance PNP bipolar junction transistor for general-purpose applications.
Product Features and Performance
Operating temperature up to 150°C
Power dissipation of 900 mW
Collector-emitter breakdown voltage of 50 V
Collector current (maximum) of 3 A
Collector current cutoff (maximum) of 1 A
VCE saturation voltage of 500 mV at 100 mA, 2 A
DC current gain (hFE) of 200 min. at 100 mA, 2 V
Transition frequency of 380 MHz
Product Advantages
Excellent high-frequency performance
High power handling capability
Reliable operation in high-temperature environments
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 3 A
Current Collector Cutoff (Max): 1 A
Vce Saturation (Max) @ Ib, Ic: 500 mV @ 100 mA, 2 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100 mA, 2 V
Frequency Transition: 380 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Application Areas
General-purpose electronics
Power amplifiers
Switching circuits
Voltage regulators
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent high-frequency performance for demanding applications
High power handling capability for efficient operation
Reliable operation in high-temperature environments
RoHS3 compliance for environmentally conscious designs
Compatibility with widely used surface-mount packages