CAT24M01WI-GT3 - onsemi

Manufacturer Part Number

CAT24M01WI-GT3

Manufacturer

onsemi

Introduction

1 Mbit EEPROM Memory Integrated Circuit

Product Features and Performance

1 Mbit of Non-Volatile EEPROM Memory

Memory Organization: 128K x 8

Access Time: 400 ns

Write Cycle Time: 5 ms per Word/Page

Clock Frequency: 1 MHz

Voltage Range: 1.8 V to 5.5 V

Operating Temperature Range: -40°C to 85°C

Product Advantages

High Endurance: 1 million Write/Erase Cycles

Reliable Data Retention: 100 Years

Small 8-SOIC Package

Low Power Consumption

Fast Write Operation

Key Technical Parameters

Memory Size: 1 Mbit

Memory Type: Non-Volatile EEPROM

Memory Interface: IC

Mounting Type: Surface Mount

Package: 8-SOIC (0.154", 3.90mm Width)

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 Compliant

Supports High-Reliability Applications

Compatibility

Designed to be compatible with a wide range of electronic systems and devices that require non-volatile memory storage.

Application Areas

Embedded Systems

Industrial Automation

Automotive Electronics

Consumer Electronics

Product Lifecycle

This product is an active and ongoing offering from onsemi. Replacement or upgraded models may become available in the future as technology progresses.

Key Reasons to Choose This Product

Large 1 Mbit Memory Capacity

Fast Access and Write Times

Wide Operating Voltage and Temperature Range

Exceptional Endurance and Data Retention

Small, Space-Saving 8-SOIC Package

RoHS3 Compliance for Environmental Responsibility

Reliable Performance for Critical Applications